Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Applied Sciences
سال: 2020
ISSN: 2076-3417
DOI: 10.3390/app10103596